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High Power Single Bar Diode Laser Chip


Category

High Power Single Bar Diode Laser Chip


DG-UMB Series is unmounted high power single bar diode laser chips capable of operating in continuous-wave (CW) up to 100 W (808 nm), 120 W (940 nm), 200W (976 nm) and quasi-continuous-wave (QCW) up to 500 W (808 nm), 700 W (940 nm) output power.

Features

  • High Efficiency Epitaxial Structure Design
  • High-quality Epitaxial Wafer Growth
  • Special Passivating Treatments for Cavity Surface

Applications

 

Industrial

 

Scientific Research 

 

Medical Systems

 

Defense and Security

 

Printing Industry

 

Biomedical Science

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Model

DG-UMB-30-19-780-TE-50-1.0

DG-UMB-50-47-780-TE-100-1.5

DG-UMB-75-62-780-TE-300-1.5

DG-UMB-30-19-808-TE-50-1.0

DG-UMB-50-47-808-TE-60-1.0

DG-UMB-50-47-808-TE-100-1.5

DG-UMB-75-38-808-TE-300-1.5

DG-UMB-75-62-808-TE-300-1.5

DG-UMB-75-62-808-TE-500-2.0

DG-UMB-80-43-808-TE-500-2.5

DG-UMB-30-19-915-TE-50-1.0

DG-UMB-30-19-940-TE-50-1.0

DG-UMB-50-47-940-TE-100-1.5

DG-UMB-75-62-940-TE-300-1.5

DG-UMB-75-62-940-TE-500-2.0

DG-UMB-84-42-940-TE-500-2.5

DG-UMB-84-42-940-TE-700-2.5

DG-UMB-30-19-975-TE-80-1.5

DG-UMB-50-47-975-TE-100-1.5

DG-UMB-75-62-975-TE-300-1.5

DG-UMB-75-62-975-TE-500-2.0

DG-UMB-84-42-975-TE-500-2.5

DG-UMB-30-19-1064-TE-50-1.0

DG-UMB-30-19-1064-TE-80-1.5

DG-UMB-50-47-1064-TE-100-1.5

DG-UMB-75-62-1064-TE-300-1.5

Wave length

780nm

780nm

780nm

808nm

808nm

808nm

808nm

808nm

808nm

808nm

915nm

940nm

940nm

940nm

940nm

940nm

940nm

975nm

975nm

975nm

975nm

975nm

1064nm

1064nm

1064nm

1064nm

Power

50W

100W

300W

50W

60W

100W

300W

300W

500W

500W

50W

50W

100W

300W

500W

500W

700W

80W

100W

300W

500W

500W

50W

80W

100W

300W

Cavity length

1020μm

1520μm

1520μm

1020μm

1020μm

1520μm

1520μm

1520μm

2020μm

2700μm

1020μm

1020μm

1520μm

1520μm

2020μm

2520μm

2520μm

1520μm

1520μm

1520μm

2020μm

2520μm

1020μm

1520μm

1520μm

1520μm